Microchip Technology APT5014BLLG

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

500 V

Id - Continuous Drain Current

35 A

Rds On - Drain-Source Resistance

140 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5 V

Qg - Gate Charge

72 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

403 W

Channel Mode

Enhancement

Tradename

Power MOS 7

Fall Time

3 ns

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

23 ns

Typical Turn-On Delay Time

11 ns

Unit Weight

0.211644 oz

Product Status

活跃

Power Dissipation (Max)

403W (Tc)

厂商

微芯片技术

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

35A (Tc)

Base Product Number

APT5014

Package

Tube

包装

Tube

系列

POWER MOS 7®

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

140mOhm @ 17.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

3261 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

72 nC @ 10 V

上升时间

6 ns

漏源电压 (Vdss)

500 V

Vgs（最大值）

±30V

场效应管特性

-

高度

5.31 mm

长度

21.46 mm

宽度

16.26 mm