Microchip Technology APT50GS60BRDQ2G
- 收藏
- 对比
APT50GS60BRDQ2G
1610-APT50GS60BRDQ2G
晶体管 - IGBT - 单个
TO-247-3
大陆
立即发货

IGBT Transistors FG, IGBT-COMBI, 600V, TO-247, RoHSView in Development Tools Selector
1最小包装量--
APT50GS60BRDQ2G详情
Microchip Technology APT50GS60BRDQ2G重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
包装/外壳
TO-247-3
安装类型
通孔
供应商器件包装
TO-247 [B]
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
600 V
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
93 A
Pd - Power Dissipation
415 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
93 A
Gate-Emitter Leakage Current
100 nA
Factory Pack QuantityFactory Pack Quantity
1
Tradename
霹雳HS
Unit Weight
1.340411 oz
Package
Tube
Current-Collector (Ic) (Max)
93 A
Base Product Number
APT50GS60
厂商
微芯片技术
Product Status
活跃
Test Conditions
400V, 40A, 4.7Ohm, 15V
包装
Tube
操作温度
-55°C ~ 150°C (TJ)
系列
Thunderbolt IGBT®
配置
Single
输入类型
Standard
功率 - 最大
415 W
工作温度范围
- 55 C to + 150 C
电压 - 集射极击穿(最大值)
600 V
不同 Vge、Ic 时 Vce(on)(最大值)
3.15V @ 15V, 50A
连续集电极电流
93 A
IGBT类型
NPT
闸门收费
235 nC
集极脉冲电流(Icm)
195 A
Td(开/关)@25°C
16ns/225ns
开关能量
755µJ (off)
反向恢复时间(trr)
25 ns
高度
5.31 mm
长度
21.46 mm
宽度
16.26 mm
APT50GS60BRDQ2G拓展信息
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology
Microchip Technology







哦! 它是空的。