Microchip Technology APT53N60BC6

包装/外壳

TO-247-3

安装类型

通孔

供应商器件包装

TO-247 [B]

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

53 A

Rds On - Drain-Source Resistance

70 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

154 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

417 W

Channel Mode

Enhancement

Fall Time

74 ns

Forward Transconductance - Min

-

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

151 ns

Typical Turn-On Delay Time

14 ns

Unit Weight

0.211644 oz

Continuous Drain Current Id

53

Package

Tube

Base Product Number

APT53N60

Current - Continuous Drain (Id) @ 25℃

53A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

417W (Tc)

Product Status

活跃

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

CoolMOS™

配置

Single

功率耗散

417

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

70mOhm @ 25.8A, 10V

不同 Id 时 Vgs(th)（最大值）

3.5V @ 1.72mA

输入电容(Ciss)(Max)@Vds

4020 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

154 nC @ 10 V

上升时间

36 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-