Microchip Technology APT60N60BCSG

包装/外壳

TO-247-3

安装类型

通孔

表面安装

NO

供应商器件包装

TO-247 [B]

终端数量

3

晶体管元件材料

SILICON

RoHS

Details

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

60 A

Rds On - Drain-Source Resistance

45 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

3 V

Qg - Gate Charge

150 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

431 W

Channel Mode

Enhancement

Fall Time

10 ns

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

100 ns

Typical Turn-On Delay Time

30 ns

Unit Weight

0.211644 oz

Continuous Drain Current Id

60

Package

Tube

Base Product Number

APT60N60

Current - Continuous Drain (Id) @ 25℃

60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

微芯片技术

Power Dissipation (Max)

431W (Tc)

Product Status

活跃

Package Description

FLANGE MOUNT, R-PSFM-T3

Package Style

FLANGE MOUNT

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Manufacturer Part Number

APT60N60BCSG

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROCHIP TECHNOLOGY INC

Risk Rank

5.2

Drain Current-Max (ID)

60 A

包装

Tube

操作温度

-55°C ~ 150°C (TJ)

系列

-

端子位置

SINGLE

终端形式

THROUGH-HOLE

Reach合规守则

unknown

JESD-30代码

R-PSFM-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

功率耗散

431

场效应管类型

N-Channel

晶体管应用

SWITCHING

Rds On(Max)@Id,Vgs

45mOhm @ 44A, 10V

不同 Id 时 Vgs(th)（最大值）

3.9V @ 3mA

输入电容(Ciss)(Max)@Vds

7200 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

190 nC @ 10 V

上升时间

20 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

极性/通道类型

N-CHANNEL

JEDEC-95代码

TO-247

漏极-源极导通最大电阻

0.045 Ω

脉冲漏极电流-最大值(IDM)

230 A

DS 击穿电压-最小值

600 V

信道型

N

雪崩能量等级（Eas）

1950 mJ

场效应管技术

METAL-OXIDE SEMICONDUCTOR

场效应管特性

-

高度

5.31 mm

长度

21.46 mm

宽度

16.26 mm