Microchip Technology APT70GR65B2DU40
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APT70GR65B2DU40
1610-APT70GR65B2DU40
晶体管 - IGBT - 单个
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IGBT Transistors Insulated Gate Bipolar Transistor - Power MOS 8
1最小包装量--
APT70GR65B2DU40详情
Microchip Technology APT70GR65B2DU40重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
RoHS
Details
Mounting Styles
通孔
Collector- Emitter Voltage VCEO Max
650 V
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
- 30 V, + 30 V
Continuous Collector Current at 25 C
134 A
Pd - Power Dissipation
595 W
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Factory Pack QuantityFactory Pack Quantity
1
Package Description
,
Manufacturer Part Number
APT70GR65B2DU40
Part Life Cycle Code
Obsolete
Ihs Manufacturer
MICROSEMI CORP
Risk Rank
5.72
包装
Tube
ECCN 代码
EAR99
Reach合规守则
compliant
配置
Single
APT70GR65B2DU40拓展信息
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