Microchip Technology APT70SM70S

包装/外壳

D3PAK-3

底架

表面贴装

表面安装

YES

终端数量

2

晶体管元件材料

碳化硅

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

700 V

Id - Continuous Drain Current

50 A

Rds On - Drain-Source Resistance

75 mOhms

Vgs - Gate-Source Voltage

- 10 V, + 25 V

Vgs th - Gate-Source Threshold Voltage

1.7 V

Qg - Gate Charge

120 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

220 W

Channel Mode

Enhancement

Fall Time

20 ns

Factory Pack QuantityFactory Pack Quantity

1

Typical Turn-Off Delay Time

34 ns

Typical Turn-On Delay Time

11 ns

Unit Weight

0.218699 oz

Package Description

D3PAK, 3/2 PIN

Package Style

小概要

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

175 °C

Rohs Code

有

Manufacturer Part Number

APT70SM70S

Package Shape

RECTANGULAR

Number of Elements

1

Part Life Cycle Code

Obsolete

Ihs Manufacturer

MICROSEMI CORP

Risk Rank

5.83

Drain Current-Max (ID)

50 A

包装

Tube

系列

APT70SM70

ECCN 代码

EAR99

最高工作温度

175 °C

最小工作温度

-55 °C

最大功率耗散

300 W

端子位置

SINGLE

终端形式

鸥翼

Reach合规守则

compliant

JESD-30代码

R-PSSO-G2

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

箱体转运

DRAIN

晶体管应用

SWITCHING

上升时间

9 ns

漏源电压 (Vdss)

700 V

极性/通道类型

N-CHANNEL

晶体管类型

1 N-Channel

连续放电电流(ID)

65 A

最大漏极电流 (Abs) (ID)

50 A

漏极-源极导通最大电阻

0.09 Ω

脉冲漏极电流-最大值(IDM)

117 A

DS 击穿电压-最小值

700 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

220 W

最大rds

70 mΩ