参数名
参数值
参数名
参数值
安装类型
通孔
包装/外壳
TO-247-4
引脚数
4
供应商器件包装
TO-247-4
厂商
微芯片技术
Package
Bulk
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
3.25V @ 2.5mA (Typ)
Power Dissipation (Max)
370W (Tc)
Number of Elements per Chip
1
Package Type
TO-247-4
Continuous Drain Current Id
68A
Id - Continuous Drain Current
68 A
Typical Turn-Off Delay Time
15 ns
RoHS
Details
Rds On - Drain-Source Resistance
35 mOhms
Qg - Gate Charge
178 nC
Brand
Microchip Technology / Atmel
Manufacturer
Microchip
Channel Mode
Enhancement
Mounting Styles
通孔
Factory Pack QuantityFactory Pack Quantity
1
Minimum Operating Temperature
- 55 C
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Maximum Operating Temperature
+ 175 C
Transistor Polarity
N-Channel
Pd - Power Dissipation
370 W
Vgs th - Gate-Source Threshold Voltage
3.25 V
Typical Turn-On Delay Time
7 ns
Vds - Drain-Source Breakdown Voltage
1.7 kV
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
Tube
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
370W
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
45mOhm @ 30A, 20V
输入电容(Ciss)(Max)@Vds
3300 pF @ 1000 V
门极电荷(Qg)(最大)@Vgs
178 nC @ 20 V
上升时间
7 ns
漏源电压 (Vdss)
1700 V
Vgs(最大值)
+23V, -10V
产品类别
MOSFET
信道型
N
场效应管特性
-
产品类别
MOSFET