参数名
参数值
参数名
参数值
安装类型
通孔
包装/外壳
TO-247-4
引脚数
4
供应商器件包装
TO-247-4
Current - Continuous Drain (Id) @ 25℃
39A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
20V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
2.4V @ 1mA
Power Dissipation (Max)
143W (Tc)
Base Product Number
MSC060
Product Status
活跃
Package
Tube
厂商
微芯片技术
Continuous Drain Current Id
39
Number of Elements per Chip
1
Package Type
TO-247-4
Vds - Drain-Source Breakdown Voltage
700 V
Typical Turn-On Delay Time
18 ns
Vgs th - Gate-Source Threshold Voltage
1.9 V
Pd - Power Dissipation
143 W
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 10 V, + 23 V
Unit Weight
0.211644 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1
Mounting Styles
通孔
Channel Mode
Enhancement
Manufacturer
Microchip
Brand
微芯片技术
Qg - Gate Charge
56 nC
Rds On - Drain-Source Resistance
75 mOhms
RoHS
Details
Typical Turn-Off Delay Time
26 ns
Id - Continuous Drain Current
39 A
操作温度
-55°C ~ 175°C (TJ)
系列
-
包装
Tube
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
143
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
75mOhm @ 20A, 20V
输入电容(Ciss)(Max)@Vds
1175 pF @ 700 V
门极电荷(Qg)(最大)@Vgs
56 nC @ 20 V
上升时间
7 ns
漏源电压 (Vdss)
700 V
Vgs(最大值)
+23V, -10V
产品类别
MOSFET
晶体管类型
1 N-Channel
信道型
N
场效应管特性
-
产品类别
MOSFET