Microchip Technology VP0104N3-G P002

包装/外壳

TO-92-3

表面安装

NO

终端数量

3

晶体管元件材料

SILICON

Unit Weight

0.016000 oz

Typical Turn-On Delay Time

4 ns

Typical Turn-Off Delay Time

8 ns

Factory Pack QuantityFactory Pack Quantity

2000

Fall Time

4 ns

Channel Mode

Enhancement

Pd - Power Dissipation

1 W

Maximum Operating Temperature

+ 150 C

Minimum Operating Temperature

- 55 C

Qg - Gate Charge

-

Vgs th - Gate-Source Threshold Voltage

3.5 V

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Rds On - Drain-Source Resistance

15 Ohms

Id - Continuous Drain Current

250 mA

Vds - Drain-Source Breakdown Voltage

40 V

Transistor Polarity

P-Channel

Mounting Styles

通孔

RoHS

Details

Package Description

CYLINDRICAL, O-PBCY-T3

Package Style

CYLINDRICAL

Package Body Material

PLASTIC/EPOXY

Operating Temperature-Min

-55 °C

Operating Temperature-Max

150 °C

Rohs Code

有

Manufacturer Part Number

VP0104N3-GP002

Package Shape

ROUND

Number of Elements

1

Part Life Cycle Code

活跃

Ihs Manufacturer

MICROCHIP TECHNOLOGY INC

Risk Rank

5.29

Drain Current-Max (ID)

0.25 A

包装

Reel

附加功能

高输入阻抗

端子位置

BOTTOM

终端形式

THROUGH-HOLE

Reach合规守则

compliant

JESD-30代码

O-PBCY-T3

配置

Single

通道数量

1 Channel

操作模式

增强型MOSFET

晶体管应用

SWITCHING

上升时间

3 ns

极性/通道类型

P-CHANNEL

晶体管类型

1 P-Channel

JEDEC-95代码

TO-92

漏极-源极导通最大电阻

8 Ω

DS 击穿电压-最小值

40 V

场效应管技术

METAL-OXIDE SEMICONDUCTOR

最大耗散功率(Abs)

1 W

反馈上限-最大值 (Crss)

8 pF

产品

MOSFET小信号