W3E32M72S-266BM详情
Microsemi W3E32M72S-266BM重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
4A994.a
Module
DRAM模块
Module Density
256Mbyte
Number of Chip per Module
5
Chip Density (bit)
460.8M
Data Bus Width (bit)
72
Max. Access Time (ns)
0.75
Maximum Clock Rate (MHz)
266
Chip Package Type
PBGA
Minimum Operating Supply Voltage (V)
2.3
Typical Operating Supply Voltage (V)
2.5
Maximum Operating Supply Voltage (V)
2.7
Operating Current (mA)
2000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
125
Supplier Temperature Grade
Military
ECC Support
有
Number of Chip Banks
4
CAS Latency
2.5
SPD EEPROM Support
无
Supplier Package
BGA
Mounting
表面贴装
Package Height
2.03(Max)
Package Length
32.1(Max)
Package Width
25.1(Max)
PCB changed
219
引脚数量
219
组织结构
32Mx72
锁相环
无
自我刷新
有
RoHS状态
供应商未确认
W3E32M72S-266BM拓展信息
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
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