WEDPN16M64V-100B2I详情
Microsemi WEDPN16M64V-100B2I重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
ECCN (US)
4A994.a
Module
DRAM模块
Module Density
1Gbit
Number of Chip per Module
4
Chip Density (bit)
256M
Data Bus Width (bit)
64
Max. Access Time (ns)
7|7|7|7|7|7|7|7|7|7|7|7|7|7
Maximum Clock Rate (MHz)
100
Chip Configuration
16Mx16
Chip Package Type
PBGA
Minimum Operating Supply Voltage (V)
3
Typical Operating Supply Voltage (V)
3.3
Maximum Operating Supply Voltage (V)
3.6
Operating Current (mA)
540
Minimum Operating Temperature (°C)
-40
Maximum Operating Temperature (°C)
85
Supplier Temperature Grade
Industrial
Module Sides
Single
ECC Support
无
Number of Chip Banks
4
CAS Latency
3|2
SPD EEPROM Support
无
Supplier Package
PBGA
Mounting
表面贴装
Package Height
2.03(Max)
Package Length
21.1(Max)
Package Width
21.1(Max)
PCB changed
219
零件状态
Unconfirmed
引脚数量
219
组织结构
16Mx64
锁相环
无
刷新周期
8K
自我刷新
有
RoHS状态
供应商未确认
WEDPN16M64V-100B2I拓展信息
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi
Microsemi









哦! 它是空的。