Nexperia PMCB60XNEZ

包装/外壳

DSN10063-3

安装类型

表面贴装

供应商器件包装

DSN1006-3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

30 V

Id - Continuous Drain Current

4.3 A

Rds On - Drain-Source Resistance

55 mOhms

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Vgs th - Gate-Source Threshold Voltage

1.1 V

Qg - Gate Charge

5 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

1 W

Channel Mode

Enhancement

Fall Time

74 ns

Forward Transconductance - Min

6.7 S

Factory Pack QuantityFactory Pack Quantity

10000

Typical Turn-Off Delay Time

107 ns

Typical Turn-On Delay Time

20 ns

Part # Aliases

934662892326

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Nexperia USA Inc.

Power Dissipation (Max)

480mW (Ta), 7W (Tc)

Product Status

活跃

包装

切割胶带

操作温度

-55°C ~ 150°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

55mOhm @ 3.5A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.1V @ 250µA

输入电容(Ciss)(Max)@Vds

420 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

7.5 nC @ 4.5 V

上升时间

40 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

晶体管类型

1 N-Channel

场效应管特性

-