Nexperia PMDT290UNEH

安装类型

表面贴装

包装/外壳

SOT-563, SOT-666

供应商器件包装

SOT-666

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

PMDT290

Current - Continuous Drain (Id) @ 25℃

800mA (Ta)

厂商

Nexperia USA Inc.

Product Status

活跃

MSL

MSL 1 - Unlimited

Qualification

AEC-Q101

Transistor Polarity

N通道

Continuous Drain Current Id

800mA

Vds - Drain-Source Breakdown Voltage

20 V

Typical Turn-On Delay Time

6 ns

Vgs th - Gate-Source Threshold Voltage

950 mV

Pd - Power Dissipation

1.09 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 8 V, + 8 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

4000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

1.6 S

Channel Mode

Enhancement

Part # Aliases

934065732125

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

450 pC

Rds On - Drain-Source Resistance

380 mOhms

RoHS

Details

Typical Turn-Off Delay Time

86 ns

Id - Continuous Drain Current

800 mA

操作温度

-55°C ~ 150°C (TJ)

系列

Automotive, AEC-Q101

包装

MouseReel

子类别

MOSFETs

技术

MOSFET (Metal Oxide)

配置

2 N-Channel (Dual)

通道数量

2 Channel

功率 - 最大

330mW (Ta), 1.09W (Tc)

Rds On(Max)@Id,Vgs

380mOhm @ 500mA, 4.5V

不同 Id 时 Vgs(th)（最大值）

950mV @ 250µA

输入电容(Ciss)(Max)@Vds

83pF @ 10V

门极电荷(Qg)(最大)@Vgs

4.5V

上升时间

4 ns

漏源电压 (Vdss)

20V

产品类别

MOSFET

晶体管类型

2 N-Channel Trench MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET