Nexperia PSMN1R8-80SSFJ

安装类型

表面贴装

包装/外壳

SOT-1235

供应商器件包装

LFPAK88 (SOT1235)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

PSMN1R8

Current - Continuous Drain (Id) @ 25℃

270A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

7V, 10V

厂商

Nexperia USA Inc.

Power Dissipation (Max)

341W (Ta)

Product Status

活跃

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4V @ 1mA

Vds - Drain-Source Breakdown Voltage

80 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

341 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

148 nC

Rds On - Drain-Source Resistance

2.5 mOhms

Id - Continuous Drain Current

270 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

1.8mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

15319 pF @ 40 V

门极电荷(Qg)(最大)@Vgs

222 nC @ 10 V

漏源电压 (Vdss)

80 V

Vgs（最大值）

±20V

场效应管特性

-