Nexperia PSMN8R5-108ESQ

EU RoHS

供应商未确认

ECCN (US)

EAR99

Automotive

无

PPAP

无

Category

功率MOSFET

Channel Mode

Enhancement

Number of Elements per Chip

1

Maximum Drain Source Voltage (V)

108

Maximum Gate Source Voltage (V)

20

Maximum Gate Threshold Voltage (V)

4.5

Maximum Continuous Drain Current (A)

100

Maximum Gate Source Leakage Current (nA)

100

Maximum IDSS (uA)

1

Maximum Drain Source Resistance (mOhm)

8.5@10V

Typical Gate Charge @ Vgs (nC)

111@10V

Typical Gate Charge @ 10V (nC)

111

Typical Input Capacitance @ Vds (pF)

5512@50V

Maximum Power Dissipation (mW)

263000

Typical Fall Time (ns)

43

Typical Rise Time (ns)

35

Typical Turn-Off Delay Time (ns)

87

Typical Turn-On Delay Time (ns)

20

Minimum Operating Temperature (°C)

-55

Maximum Operating Temperature (°C)

175

Mounting

通孔

Package Height

9.4(Max)

Package Width

4.5(Max)

Package Length

10.3(Max)

PCB changed

3

Tab

Tab

Supplier Package

I2PAK

零件状态

Obsolete

引脚数量

3

配置

Single

信道型

N