Nexperia USA Inc. BSH103BKR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Power Dissipation (Max)

330mW (Ta), 2.1W (Tc)

Continuous Drain Current Id

1

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

1.25 V

Pd - Power Dissipation

2.1 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

800 pC

Rds On - Drain-Source Resistance

270 mOhms

Id - Continuous Drain Current

1 A

操作温度

-55°C ~ 150°C (TJ)

通道数量

1 Channel

功率耗散

480

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

270mOhm @ 1A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.25V @ 250μA

输入电容(Ciss)(Max)@Vds

79.3 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

1.2 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

信道型

N通道

场效应管特性

-