Nexperia USA Inc. GAN039-650NTBZ
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GAN039-650NTBZ
1729-GAN039-650NTBZ
晶体管 - FET,MOSFET - 单个
12-BESOP (0.370", 9.40mm Width), Exposed Pad
大陆
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650 V, 33 MOHM GALLIUM NITRIDE (
1最小包装量--
GAN039-650NTBZ详情
Nexperia USA Inc. GAN039-650NTBZ重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
12-BESOP (0.370", 9.40mm Width), Exposed Pad
供应商器件包装
CCPAK1212i
Current - Continuous Drain (Id) @ 25℃
58.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
4.6V @ 1mA
Power Dissipation (Max)
250W (Tc)
厂商
Nexperia USA Inc.
操作温度
-55°C ~ 150°C (TJ)
包装
Tape & Reel (TR);Cut Tape (CT);Digi-Reel®
零件状态
Discontinued at Digi-Key
场效应管类型
N-Channel
Rds On(Max)@Id,Vgs
39mOhm @ 32A, 10V
输入电容(Ciss)(Max)@Vds
1980 pF @ 400 V
门极电荷(Qg)(最大)@Vgs
26 nC @ 10 V
漏源电压 (Vdss)
650 V
Vgs(最大值)
±20V
GAN039-650NTBZ拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.








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