Nexperia USA Inc. GAN041-650WSBQ

安装类型

通孔

包装/外壳

TO-247-3

供应商器件包装

TO-247-3

Power Dissipation (Max)

187W

厂商

Nexperia USA Inc.

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

47.2A

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

4.5V @ 1mA

Qualification

-

Continuous Drain Current Id

47.2A

Package Type

TO-247

Vds - Drain-Source Breakdown Voltage

650 V

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

187 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.004339 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

30

Mounting Styles

通孔

Channel Mode

Enhancement

Part # Aliases

934661752127

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

22 nC

Rds On - Drain-Source Resistance

41 mOhms

RoHS

Details

Id - Continuous Drain Current

47.2 A

操作温度

-55°C ~ 175°C (TJ)

系列

-

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

41mOhm @ 32A, 10V

输入电容(Ciss)(Max)@Vds

1500 pF @ 400 V

门极电荷(Qg)(最大)@Vgs

22 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET