Nexperia USA Inc. NXV100XPR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

900mV @ 250μA

Power Dissipation (Max)

340mW (Ta), 2.1W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

1.5A

Vds - Drain-Source Breakdown Voltage

30 V

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

2.1 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934661666215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

6.4 nC

Rds On - Drain-Source Resistance

140 Ohms

RoHS

Details

Id - Continuous Drain Current

1.5 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

480mW

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

140mOhm @ 1.5A, 4.5V

输入电容(Ciss)(Max)@Vds

354 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

6.4 nC @ 4.5 V

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

信道型

P Channel

场效应管特性

-

产品

MOSFET

产品类别

MOSFET