Nexperia USA Inc. PMN30UNH

安装类型

表面贴装

包装/外壳

SC-74, SOT-457

供应商器件包装

6-TSOP

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

4.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.5V, 4.5V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

900mV @ 250μA

Power Dissipation (Max)

530mW (Ta), 4.46W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

4.5A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

900 mV

Pd - Power Dissipation

1.24 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934069334125

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

7 nC

Rds On - Drain-Source Resistance

40 mOhms

RoHS

Details

Typical Turn-Off Delay Time

34 ns

Id - Continuous Drain Current

5.7 A

系列

-

操作温度

-55°C ~ 150°C (TJ)

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

530mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

40mOhm @ 4.5A, 4.5V

输入电容(Ciss)(Max)@Vds

635 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

12 nC @ 4.5 V

上升时间

23 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±12V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET