Nexperia USA Inc. PMPB07R3ENX

安装类型

表面贴装

包装/外壳

6-UDFN Exposed Pad

供应商器件包装

DFN2020M-6

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

12A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.2V @ 250μA

Power Dissipation (Max)

1.9W (Ta), 12.5W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

12A

Id - Continuous Drain Current

17 A

Typical Turn-Off Delay Time

13 ns

RoHS

Details

Rds On - Drain-Source Resistance

8.6 mOhms

Qg - Gate Charge

19 nC

Brand

Nexperia

Manufacturer

Nexperia

Part # Aliases

934662428115

Channel Mode

Enhancement

Forward Transconductance - Min

2.8 S

Mounting Styles

SMD/SMT

Factory Pack QuantityFactory Pack Quantity

3000

Minimum Operating Temperature

- 55 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Maximum Operating Temperature

+ 150 C

Transistor Polarity

N-Channel

Pd - Power Dissipation

12.5 W

Vgs th - Gate-Source Threshold Voltage

2.2 V

Typical Turn-On Delay Time

3 ns

Vds - Drain-Source Breakdown Voltage

30 V

系列

-

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

1.9W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.6mOhm @ 12A, 10V

输入电容(Ciss)(Max)@Vds

914 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

19 nC @ 10 V

上升时间

2 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET