Nexperia USA Inc. PMPB08R6ENX

安装类型

表面贴装

包装/外壳

6-UDFN Exposed Pad

供应商器件包装

DFN2020MD-6

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

11A (Ta)

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2V @ 250μA

Power Dissipation (Max)

1.9W (Ta), 12.5W (Tc)

Base Product Number

PMPB08

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

11A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

9 ns

Vgs th - Gate-Source Threshold Voltage

2 V

Pd - Power Dissipation

12.5 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

34 S

Channel Mode

Enhancement

Part # Aliases

934661978115

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

13.7 nC

Rds On - Drain-Source Resistance

10.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

17 ns

Id - Continuous Drain Current

15 A

操作温度

-55°C ~ 150°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

1.9W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

10.5mOhm @ 11A, 10V

输入电容(Ciss)(Max)@Vds

840 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

20.6 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel Trench MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET