Nexperia USA Inc. PMV100EPAR

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.2V @ 250μA

Power Dissipation (Max)

710mW (Ta), 8.3W (Tc)

Base Product Number

PMV100

MSL

-

Qualification

AEC-Q101

Continuous Drain Current Id

2.2A

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

3.2 V

Pd - Power Dissipation

1.3 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.000282 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Forward Transconductance - Min

6 S

Channel Mode

Enhancement

Part # Aliases

934661097215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

11 nC

Rds On - Drain-Source Resistance

130 mOhms

RoHS

Details

Typical Turn-Off Delay Time

29 ns

Id - Continuous Drain Current

2.2 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

710mW

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

130mOhm @ 2.2A, 10V

输入电容(Ciss)(Max)@Vds

616 pF @ 30 V

门极电荷(Qg)(最大)@Vgs

17 nC @ 10 V

上升时间

7 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P Channel

场效应管特性

-

产品类别

MOSFET