Nexperia USA Inc. PMV52ENER

安装类型

表面贴装

包装/外壳

TO-236-3, SC-59, SOT-23-3

供应商器件包装

TO-236AB

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

3.2A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.5V @ 250μA

Power Dissipation (Max)

630mW (Ta), 5.7W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

3.2A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

2 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1.25 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934664415215

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

2.2 nC

Rds On - Drain-Source Resistance

70 mOhms

RoHS

Details

Typical Turn-Off Delay Time

6 ns

Id - Continuous Drain Current

3.2 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

630mW

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

70mOhm @ 3.2A, 10V

输入电容(Ciss)(Max)@Vds

100 pF @ 15 V

门极电荷(Qg)(最大)@Vgs

3.3 nC @ 10 V

上升时间

13 ns

漏源电压 (Vdss)

30 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET