参数名
参数值
参数名
参数值
安装类型
表面贴装
包装/外壳
0201 (0603 Metric)
供应商器件包装
DFN0603-3 (SOT8013)
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
900mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Voltage - Gate Threshold (Vgs(th)) (Max) @ Id
900mV @ 250μA
Power Dissipation (Max)
500mW (Ta), 4.7W (Tc)
Continuous Drain Current Id
900mA
Qualification
-
MSL
-
Vds - Drain-Source Breakdown Voltage
20 V
Typical Turn-On Delay Time
1.5 ns
Vgs th - Gate-Source Threshold Voltage
900 mV
Pd - Power Dissipation
500 mW
Transistor Polarity
P-Channel
Maximum Operating Temperature
+ 150 C
Vgs - Gate-Source Voltage
- 12 V, + 12 V
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
15000
Mounting Styles
SMD/SMT
Forward Transconductance - Min
2.5 S
Channel Mode
Enhancement
Part # Aliases
934662406317
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
1.6 nC
Rds On - Drain-Source Resistance
500 mOhms
RoHS
Details
Typical Turn-Off Delay Time
7 ns
Id - Continuous Drain Current
900 mA
操作温度
-55°C ~ 150°C (TJ)
包装
MouseReel
子类别
MOSFETs
配置
Single
通道数量
1 Channel
功率耗散
300mW
场效应管类型
P-Channel
Rds On(Max)@Id,Vgs
500mOhm @ 1A, 4.5V
输入电容(Ciss)(Max)@Vds
146 pF @ 10 V
门极电荷(Qg)(最大)@Vgs
2.4 nC @ 4.5 V
上升时间
3 ns
漏源电压 (Vdss)
20 V
Vgs(最大值)
±12V
产品类别
MOSFET
信道型
P Channel
场效应管特性
-
产品类别
MOSFET