Nexperia USA Inc. PSMN013-40VLDX
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PSMN013-40VLDX
1729-PSMN013-40VLDX
晶体管 - FET,MOSFET - 阵列
SOT-1205, 8-LFPAK56
大陆
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PSMN013-40VLD - DUAL N-CHANNEL 4
1最小包装量--
PSMN013-40VLDX详情
Nexperia USA Inc. PSMN013-40VLDX重要参数规格及、参数值,及相似型号如下:
- 参数名参数值全选
- 参数名参数值全选
安装类型
表面贴装
包装/外壳
SOT-1205, 8-LFPAK56
供应商器件包装
LFPAK56D
厂商
Nexperia USA Inc.
Product Status
活跃
Current - Continuous Drain (Id) @ 25℃
42A (Ta)
Number of Elements per Chip
2
Package Type
LFPAK56D
MSL
MSL 1 - Unlimited
Qualification
-
Transistor Polarity
N通道
Continuous Drain Current Id
42A
Vds - Drain-Source Breakdown Voltage
40 V
Typical Turn-On Delay Time
5.6 ns
Vgs th - Gate-Source Threshold Voltage
2.2 V
Pd - Power Dissipation
46 W
Maximum Operating Temperature
+ 175 C
Vgs - Gate-Source Voltage
- 20 V, + 20 V
Unit Weight
0.003958 oz
Minimum Operating Temperature
- 55 C
Factory Pack QuantityFactory Pack Quantity
1500
Mounting Styles
SMD/SMT
Channel Mode
Enhancement
Part # Aliases
934662825115
Manufacturer
Nexperia
Brand
Nexperia
Qg - Gate Charge
13.9 nC
Rds On - Drain-Source Resistance
13.6 mOhms
RoHS
Details
Typical Turn-Off Delay Time
9.1 ns
Id - Continuous Drain Current
42 A
系列
-
操作温度
-55°C ~ 175°C (TJ)
包装
MouseReel
子类别
MOSFETs
技术
Si
引脚数量
8
配置
Dual
通道数量
2 Channel
功率 - 最大
46W (Ta)
场效应管类型
2 N-Channel (Half Bridge)
Rds On(Max)@Id,Vgs
13.6mOhm @ 10A, 10V
不同 Id 时 Vgs(th)(最大值)
2.2V @ 1mA
输入电容(Ciss)(Max)@Vds
1160pF @ 25V
门极电荷(Qg)(最大)@Vgs
19.4nC @ 10V
上升时间
8.1 ns
漏源电压 (Vdss)
40V
产品类别
MOSFET
信道型
N
场效应管特性
Standard
产品类别
MOSFET
PSMN013-40VLDX拓展信息
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.
Nexperia USA Inc.







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