Nexperia USA Inc. PSMN4R3-40MSHX

安装类型

表面贴装

包装/外壳

SOT-1210, 8-LFPAK33 (5-Lead)

供应商器件包装

LFPAK33

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

95A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

3.6V @ 1mA

Power Dissipation (Max)

90W (Ta)

Base Product Number

PSMN4R3

Continuous Drain Current Id

95

MSL

MSL 1 - Unlimited

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

6.5 ns

Vgs th - Gate-Source Threshold Voltage

3.6 V

Pd - Power Dissipation

90 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.001503 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934661613115

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

23 nC

Rds On - Drain-Source Resistance

4.3 mOhms

RoHS

Details

Typical Turn-Off Delay Time

12.4 ns

Id - Continuous Drain Current

95 A

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

通道数量

1 Channel

功率耗散

90

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.3mOhm @ 25A, 10V

输入电容(Ciss)(Max)@Vds

2338 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

32 nC @ 10 V

上升时间

4.5 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET