Nexperia USA Inc. PSMN8R5-40MLDX

安装类型

表面贴装

包装/外壳

SOT-1210, 8-LFPAK33 (5-Lead)

供应商器件包装

LFPAK33

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

60A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id

2.15V @ 1mA

Power Dissipation (Max)

59W (Ta)

Base Product Number

PSMN8R5

Continuous Drain Current Id

60

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

9.5 ns

Vgs th - Gate-Source Threshold Voltage

2.15 V

Pd - Power Dissipation

59 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Unit Weight

0.002642 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934661553115

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

19 nC

Rds On - Drain-Source Resistance

8.5 mOhms

RoHS

Details

Typical Turn-Off Delay Time

11 ns

Id - Continuous Drain Current

60 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

59

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.5mOhm @ 15A, 10V

输入电容(Ciss)(Max)@Vds

1814 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

27 nC @ 10 V

上升时间

9.4 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET