Nexperia USA Inc. PSMNR55-40SSHJ

安装类型

表面贴装

包装/外壳

SOT-1235

供应商器件包装

LFPAK88 (SOT1235)

厂商

Nexperia USA Inc.

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

500A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

375W (Ta)

Continuous Drain Current Id

500

Number of Elements per Chip

1

Package Type

LFPAK88

MSL

-

Qualification

-

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

40 ns

Vgs th - Gate-Source Threshold Voltage

3.6 V

Pd - Power Dissipation

375 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 175 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Part # Aliases

934661577118

Manufacturer

Nexperia

Brand

Nexperia

Qg - Gate Charge

190 nC

Rds On - Drain-Source Resistance

550 uOhms

RoHS

Details

Typical Turn-Off Delay Time

117 ns

Id - Continuous Drain Current

500 A

系列

-

操作温度

-55°C ~ 175°C (TJ)

包装

MouseReel

子类别

MOSFETs

引脚数量

4

配置

Single

通道数量

1 Channel

功率耗散

375

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

0.55mOhm @ 25A, 10V

不同 Id 时 Vgs(th)（最大值）

3.6V @ 1mA

输入电容(Ciss)(Max)@Vds

21162 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

267 nC @ 10 V

上升时间

33 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET