Qorvo QPD1000

包装/外壳

QFN-8

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

28 V

Vgs - Gate-Source Breakdown Voltage

100 V

Id - Continuous Drain Current

817 mA

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

28.8 W

Mounting Styles

SMD/SMT

Development Kit

QPD1000PCB401, QPD1000PCB402

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

750

Vgs th - Gate-Source Threshold Voltage

- 2.8 V

Part # Aliases

QPD1000TR7

Unit Weight

0.258417 oz

包装

Tray

系列

QPD1000

工作频率

30 MHz to 1.215 GHz

配置

Single

输出功率

24 W

晶体管类型

HEMT

工作温度范围

- 40 C to + 85 C

增益

19 dB