Qorvo QPD1011SR

包装/外壳

SMD-8

Part # Aliases

QPD1011

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

50 V

Vgs - Gate-Source Breakdown Voltage

145 V

Id - Continuous Drain Current

1.46 A

Maximum Drain Gate Voltage

55 V

Minimum Operating Temperature

- 40 C

Maximum Operating Temperature

+ 85 C

Pd - Power Dissipation

13 W

Mounting Styles

SMD/SMT

Development Kit

QPD1011EVB01

Forward Transconductance - Min

-

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

100

包装

Reel

系列

QPD1011

工作频率

30 MHz to 1200 MHz

输出功率

8.7 W

晶体管类型

HEMT

增益

21 dB