Qorvo TGF3015-SM

包装/外壳

QFN-EP-16

RoHS

Details

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

32 V

Vgs - Gate-Source Breakdown Voltage

- 2.7 V

Id - Continuous Drain Current

557 mA

Pd - Power Dissipation

15.3 W

Mounting Styles

SMD/SMT

Development Kit

TGF3015-SM-EVB1

Moisture Sensitive

有

Factory Pack QuantityFactory Pack Quantity

100

Part # Aliases

TGF3015 1120419

Unit Weight

0.237911 oz

包装

Tray

系列

TGF3015

工作频率

0.03 GHz to 3 GHz

配置

Single

输出功率

11 W

晶体管类型

HEMT

增益

17.1 dB