Rohm Semiconductor BSS84XHZGG2CR

安装类型

表面贴装

包装/外壳

3-XFDFN

供应商器件包装

DFN1010-3W

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

230mA (Ta)

Power Dissipation (Max)

1W (Ta)

Base Product Number

BSS84

Number of Elements per Chip

1

Package Type

DFN1010

Qualification

AEC-Q101

Continuous Drain Current Id

230mA

Vds - Drain-Source Breakdown Voltage

60 V

Typical Turn-On Delay Time

12 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

1 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

100

Mounting Styles

SMD/SMT

Forward Transconductance - Min

0.2 S

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

-

Rds On - Drain-Source Resistance

5.3 Ohms

RoHS

Details

Typical Turn-Off Delay Time

140 ns

Id - Continuous Drain Current

230 mA

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

通道数量

1 Channel

功率耗散

1W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

5.3Ohm @ 230mA, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 100μA

输入电容(Ciss)(Max)@Vds

34 pF @ 30 V

上升时间

22 ns

漏源电压 (Vdss)

60 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P-Channel

信道型

P

场效应管特性

-

产品类别

MOSFET