ROHM Semiconductor HS8MA2TCR1

安装类型

表面贴装

包装/外壳

HSML3333L-9

供应商器件包装

DFN3333-9DC

Number of Elements per Chip

2

Package Type

DFN3333-9DC

MSL

-

Qualification

-

Transistor Polarity

N and P Channel

Continuous Drain Current Id

7A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7.2 ns, 7.9 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

4 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

7.8 nC, 8.4 nC

Rds On - Drain-Source Resistance

35 mOhms, 80 mOhms

RoHS

Details

Typical Turn-Off Delay Time

12 ns, 27.6 ns

Id - Continuous Drain Current

5.5 A, 7 A

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

5A (Ta), 7A (Ta)

厂商

Rohm Semiconductor

Product Status

活跃

包装

切割胶带

操作温度

150°C (TJ)

系列

-

子类别

MOSFETs

技术

Si

引脚数量

9

配置

Dual

通道数量

2 Channel

功率 - 最大

2W (Ta)

场效应管类型

N and P-Channel

Rds On(Max)@Id,Vgs

80mOhm @ 5.5A, 10V, 35mOhm @ 7A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

320pF @ 10V, 365pF @ 10V

门极电荷(Qg)(最大)@Vgs

7.8nC @ 10V, 8.4nC @ 10V

上升时间

8 ns, 16.8 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N, P

场效应管特性

Standard

产品类别

MOSFET