Rohm Semiconductor QH8KA3TCR

安装类型

表面贴装

包装/外壳

8-SMD, Flat Lead

供应商器件包装

TSMT8

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Ta)

Mounting

表面贴装

Rad Hardened

无

Number of Elements

2

Channel Mode

Enhancement

Gate-Source Voltage (Max)

±20(V)

Operating Temp Range

-55C to 150C

Package Type

TSMT

Operating Temperature Classification

Military

Drain-Source On-Volt

30(V)

Continuous Drain Current

9(A)

MSL

MSL 1 - Unlimited

Qualification

-

Transistor Polarity

N通道

Continuous Drain Current Id

9A

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

8 ns

Vgs th - Gate-Source Threshold Voltage

2.5 V

Pd - Power Dissipation

2.6 W

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

15.5 nC

Rds On - Drain-Source Resistance

16 mOhms

RoHS

Details

Typical Turn-Off Delay Time

33 ns

Id - Continuous Drain Current

9 A

系列

-

操作温度

150°C (TJ)

包装

卷带

类型

小信号

子类别

MOSFETs

技术

Si

引脚数量

8

极性

N

配置

Dual

通道数量

2 Channel

功率耗散

2.6(W)

功率 - 最大

1.5W (Ta)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

16mOhm @ 9A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

640pF @ 15V

门极电荷(Qg)(最大)@Vgs

15.5nC @ 10V

上升时间

19 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

信道型

N通道

场效应管特性

Standard

产品类别

MOSFET