Rohm Semiconductor QS6K1FRATR

安装类型

表面贴装

包装/外壳

SOT-23-6 Thin, TSOT-23-6

供应商器件包装

TSMT6 (SC-95)

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1A (Ta)

Base Product Number

QS6K1

Continuous Drain Current

1(A)

Drain-Source On-Volt

30(V)

Operating Temperature Classification

Military

Package Type

TSMT

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

12(V)

Channel Mode

Enhancement

Number of Elements

2

Rad Hardened

无

Mounting

表面贴装

Vds - Drain-Source Breakdown Voltage

30 V

Typical Turn-On Delay Time

7 ns

Vgs th - Gate-Source Threshold Voltage

500 mV

Qualification

AEC-Q101

Pd - Power Dissipation

1.25 W

Transistor Polarity

N-Channel, NPN

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 12 V, + 12 V

Unit Weight

0.000353 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

3000

Mounting Styles

SMD/SMT

Part # Aliases

QS6K1FRA

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

1.7 nC

Rds On - Drain-Source Resistance

170 mOhms

RoHS

Details

Typical Turn-Off Delay Time

15 ns

Id - Continuous Drain Current

1 A

系列

Automotive, AEC-Q101

操作温度

150°C

包装

卷带

类型

功率MOSFET

子类别

MOSFETs

技术

Si

引脚数量

6

极性

N

配置

Dual

通道数量

2 Channel

功率耗散

1.25(W)

功率 - 最大

900mW (Tc)

场效应管类型

2 N-Channel (Dual)

Rds On(Max)@Id,Vgs

238mOhm @ 1A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

10V

门极电荷(Qg)(最大)@Vgs

2.4nC @ 4.5V

上升时间

7 ns

漏源电压 (Vdss)

30V

产品类别

MOSFET

晶体管类型

2 N-Channel

场效应管特性

Logic Level Gate, 2.5V Drive

产品类别

MOSFET