Rohm Semiconductor R6000ENHTB1

安装类型

表面贴装

包装/外壳

8-SOIC (0.154", 3.90mm Width)

供应商器件包装

8-SOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

500mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

2W (Ta)

Qualification

-

Continuous Drain Current Id

500mA

Number of Elements per Chip

1

Package Type

SOP

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

600 V

Typical Turn-On Delay Time

17 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

2 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

4.3 nC

Rds On - Drain-Source Resistance

8.8 Ohms

RoHS

Details

Typical Turn-Off Delay Time

37 ns

Id - Continuous Drain Current

500 mA

系列

-

操作温度

150°C

包装

切割胶带

子类别

MOSFETs

引脚数量

8

配置

Single

通道数量

1 Channel

功率耗散

2W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.8Ohm @ 200mA, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

45 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

4.3 nC @ 10 V

上升时间

27 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±20V

产品类别

MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET