ROHM Semiconductor R6013VNXC7G

包装/外壳

TO-220FM-3

安装类型

通孔

供应商器件包装

TO-220FM

Mounting Styles

通孔

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

600 V

Id - Continuous Drain Current

8 A

Rds On - Drain-Source Resistance

300 mOhms

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Vgs th - Gate-Source Threshold Voltage

5.5 V

Qg - Gate Charge

21 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

54 W

Channel Mode

Enhancement

Fall Time

25 ns

Factory Pack QuantityFactory Pack Quantity

50

Typical Turn-Off Delay Time

46 ns

Typical Turn-On Delay Time

18 ns

Package

Tube

Base Product Number

R6013VN

Current - Continuous Drain (Id) @ 25℃

8A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 15V

厂商

Rohm Semiconductor

Power Dissipation (Max)

54W (Tc)

Product Status

活跃

包装

Tube

操作温度

150°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

300mOhm @ 3A, 15V

不同 Id 时 Vgs(th)（最大值）

6.5V @ 500µA

输入电容(Ciss)(Max)@Vds

900 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

21 nC @ 10 V

上升时间

10 ns

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

晶体管类型

1 N-Channel

场效应管特性

-