Rohm Semiconductor R6014YNXC7G

安装类型

通孔

包装/外壳

TO-220-3 Full Pack

供应商器件包装

TO-220FM

厂商

Rohm Semiconductor

Package

Tube

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V, 12V

Power Dissipation (Max)

54W (Tc)

Qualification

-

Continuous Drain Current Id

9A

Vds - Drain-Source Breakdown Voltage

600 V

Vgs th - Gate-Source Threshold Voltage

6 V

Pd - Power Dissipation

54 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

通孔

Channel Mode

Enhancement

Qg - Gate Charge

20 nC

Rds On - Drain-Source Resistance

260 mOhms

Id - Continuous Drain Current

14 A

系列

-

操作温度

150°C (TJ)

通道数量

1 Channel

功率耗散

54W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

260mOhm @ 5A, 12V

不同 Id 时 Vgs(th)（最大值）

6V @ 1.4mA

输入电容(Ciss)(Max)@Vds

890 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

20 nC @ 10 V

漏源电压 (Vdss)

600 V

Vgs（最大值）

±30V

信道型

N通道

场效应管特性

-