Rohm Semiconductor R6509KND3TL1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

9A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

94W (Tc)

Qualification

-

Continuous Drain Current Id

9A

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

Channel Mode

Enhancement

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

20 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

94 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

16.5 nC

Rds On - Drain-Source Resistance

585 mOhms

RoHS

Details

Typical Turn-Off Delay Time

38 ns

Id - Continuous Drain Current

9 A

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

94W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

585mOhm @ 2.8A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 230μA

输入电容(Ciss)(Max)@Vds

540 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

16.5 nC @ 10 V

上升时间

20 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 N-Channel

信道型

N通道

场效应管特性

-

产品类别

MOSFET