Rohm Semiconductor R6524KNXC7G

包装/外壳

TO-220-3 Full Pack

安装类型

通孔

供应商器件包装

TO-220FM

厂商

Rohm Semiconductor

Power Dissipation (Max)

74W (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Current - Continuous Drain (Id) @ 25℃

24A (Ta)

Product Status

活跃

Package

Tube

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

24A

Vds - Drain-Source Breakdown Voltage

650 V

Typical Turn-On Delay Time

35 ns

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

74 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V, - 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

1000

Typical Turn-Off Delay Time

180 ns

Id - Continuous Drain Current

24 A

RoHS

Details

Rds On - Drain-Source Resistance

185 mOhms

Qg - Gate Charge

45 nC

Brand

ROHM 半导体

Manufacturer

ROHM 半导体

Channel Mode

Enhancement

Mounting Styles

通孔

操作温度

150°C (TJ)

系列

-

包装

Tube

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

74W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

185mOhm @ 11.3A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 750μA

输入电容(Ciss)(Max)@Vds

1850 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

45 nC @ 10 V

上升时间

60 ns

漏源电压 (Vdss)

650 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET