Rohm Semiconductor R8002CND3FRATL

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

2A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

69W (Tc)

Base Product Number

R8002

Qualification

AEC-Q101

Continuous Drain Current Id

2A

Vds - Drain-Source Breakdown Voltage

800 V

Vgs th - Gate-Source Threshold Voltage

5.5 V

Pd - Power Dissipation

69 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

12.1 nC

Rds On - Drain-Source Resistance

4.3 Ohms

Id - Continuous Drain Current

2 A

系列

Automotive, AEC-Q101

操作温度

150°C (TJ)

通道数量

1 Channel

功率耗散

69W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.3Ohm @ 1A, 10V

不同 Id 时 Vgs(th)（最大值）

5.5V @ 1mA

输入电容(Ciss)(Max)@Vds

240 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

12.1 nC @ 10 V

漏源电压 (Vdss)

800 V

Vgs（最大值）

±30V

信道型

N通道

场效应管特性

-