Rohm Semiconductor R8002KND3TL1

安装类型

表面贴装

包装/外壳

TO-252-3, DPak (2 Leads + Tab), SC-63

供应商器件包装

TO-252GE

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

1.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

30W (Tc)

MSL

MSL 1 - Unlimited

Qualification

-

Continuous Drain Current Id

1.6A

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

15 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

30 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

7.5 nC

Rds On - Drain-Source Resistance

4.2 Ohms

RoHS

Details

Typical Turn-Off Delay Time

34 ns

Id - Continuous Drain Current

1.6 A

操作温度

150°C (TJ)

包装

切割胶带

子类别

MOSFETs

配置

Single

通道数量

1 Channel

功率耗散

30W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

4.2Ohm @ 800mA, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 150μA

输入电容(Ciss)(Max)@Vds

140 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

7.5 nC @ 10 V

上升时间

16 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N通道

场效应管特性

-

产品类别

MOSFET