ROHM Semiconductor R8009KNXC7G

安装类型

表面贴装

包装/外壳

TO-220FM-3

供应商器件包装

TO-220FM

Continuous Drain Current

9(A)

Drain-Source On-Volt

800(V)

Operating Temperature Classification

Military

Package Type

TO-220FM

Operating Temp Range

-55C to 150C

Gate-Source Voltage (Max)

±20(V)

Channel Mode

Enhancement

Number of Elements

1

Rad Hardened

无

Mounting

通孔

Number of Elements per Chip

1

MSL

-

Qualification

-

Continuous Drain Current Id

9A

Vds - Drain-Source Breakdown Voltage

800 V

Typical Turn-On Delay Time

18 ns

Vgs th - Gate-Source Threshold Voltage

4.5 V

Pd - Power Dissipation

59 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

50

Mounting Styles

通孔

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

27 nC

Rds On - Drain-Source Resistance

600 mOhms

RoHS

Details

Typical Turn-Off Delay Time

30 ns

Id - Continuous Drain Current

9 A

Current - Continuous Drain (Id) @ 25℃

9A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

59W (Tc)

Product Status

活跃

包装

Bulk

操作温度

150°C (TJ)

类型

功率MOSFET

子类别

MOSFETs

技术

Si

引脚数量

3 +Tab

极性

N

配置

Single

通道数量

1 Channel

功率耗散

59(W)

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

600mOhm @ 4.5A, 10V

不同 Id 时 Vgs(th)（最大值）

4.5V @ 5mA

输入电容(Ciss)(Max)@Vds

900 pF @ 100 V

门极电荷(Qg)(最大)@Vgs

27 nC @ 10 V

上升时间

40 ns

漏源电压 (Vdss)

800 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

功率MOSFET

信道型

N

场效应管特性

-

产品类别

MOSFET