ROHM Semiconductor RA1C030LDT5CL

包装/外壳

WLCSP-3

安装类型

表面贴装

供应商器件包装

DSN1006-3

RoHS

Details

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

20 V

Id - Continuous Drain Current

3 A

Rds On - Drain-Source Resistance

190 mOhms

Vgs - Gate-Source Voltage

- 200 mV, + 7 V

Vgs th - Gate-Source Threshold Voltage

1.5 V

Qg - Gate Charge

1.5 nC

Minimum Operating Temperature

- 50 C

Maximum Operating Temperature

+ 150 C

Pd - Power Dissipation

1 W

Channel Mode

Enhancement

Fall Time

4 ns

Factory Pack QuantityFactory Pack Quantity

15000

Typical Turn-Off Delay Time

15 ns

Typical Turn-On Delay Time

6 ns

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Current - Continuous Drain (Id) @ 25℃

3A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.8V, 4.5V

厂商

Rohm Semiconductor

Power Dissipation (Max)

1W (Ta)

Product Status

活跃

包装

切割胶带

操作温度

150°C (TJ)

系列

-

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

140mOhm @ 3A, 4.5V

不同 Id 时 Vgs(th)（最大值）

1.5V @ 1mA

输入电容(Ciss)(Max)@Vds

150 pF @ 10 V

门极电荷(Qg)(最大)@Vgs

1.5 nC @ 4.5 V

上升时间

6 ns

漏源电压 (Vdss)

20 V

Vgs（最大值）

+7V, -0.2V

场效应管特性

-