Rohm Semiconductor RCJ331N25TL

安装类型

表面贴装

包装/外壳

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

供应商器件包装

TO-263S

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

33A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Power Dissipation (Max)

1.56W (Ta), 211W (Tc)

Qualification

-

Continuous Drain Current Id

33A

Number of Elements per Chip

1

Package Type

TO-263S

Vds - Drain-Source Breakdown Voltage

250 V

Vgs th - Gate-Source Threshold Voltage

5 V

Pd - Power Dissipation

211 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 30 V, + 30 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

80 nC

Rds On - Drain-Source Resistance

105 mOhms

Id - Continuous Drain Current

33 A

操作温度

150°C (TJ)

引脚数量

3

通道数量

1 Channel

功率耗散

211W

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

105mOhm @ 16.5A, 10V

不同 Id 时 Vgs(th)（最大值）

5V @ 1mA

输入电容(Ciss)(Max)@Vds

4500 pF @ 25 V

门极电荷(Qg)(最大)@Vgs

80 nC @ 10 V

漏源电压 (Vdss)

250 V

Vgs（最大值）

±30V

信道型

N通道

场效应管特性

-