ROHM Semiconductor RD3G03BATTL1

安装类型

Panel Mount, Through Hole

包装/外壳

TO-252-3

越来越多的功能

Flange

外壳材料

Aluminum

供应商器件包装

TO-252

Package

零售包装

Primary Material

Metal

厂商

Glenair

Product Status

活跃

Contact Materials

Copper Alloy

Contact Finish Mating

Gold

Number of Elements per Chip

1

Package Type

DPAK (TO-252)

Qualification

-

Continuous Drain Current Id

35A

Vds - Drain-Source Breakdown Voltage

40 V

Typical Turn-On Delay Time

13 ns

Vgs th - Gate-Source Threshold Voltage

1 V

Pd - Power Dissipation

56 W

Transistor Polarity

P-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 10 V, + 10 V

Unit Weight

0.011640 oz

Minimum Operating Temperature

- 55 C

Factory Pack QuantityFactory Pack Quantity

2500

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Manufacturer

ROHM 半导体

Brand

ROHM 半导体

Qg - Gate Charge

38 nC

Rds On - Drain-Source Resistance

19.1 mOhms

RoHS

Details

Typical Turn-Off Delay Time

125 ns

Id - Continuous Drain Current

35 A

Current - Continuous Drain (Id) @ 25℃

35A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Power Dissipation (Max)

56W (Ta)

操作温度

-65°C ~ 175°C

系列

806

包装

切割胶带

终端

Solder

连接器类型

Plug, Male Pins

颜色

橄榄色

紧固类型

Threaded

子类别

MOSFETs

技术

Si

方向

E

外壳完成

橄榄色镉

引脚数量

3

配置

Single

通道数量

1 Channel

功率耗散

56W

场效应管类型

P-Channel

Rds On(Max)@Id,Vgs

19.1mOhm @ 35A, 10V

不同 Id 时 Vgs(th)（最大值）

2.5V @ 1mA

输入电容(Ciss)(Max)@Vds

2100 pF @ 20 V

门极电荷(Qg)(最大)@Vgs

38 nC @ 10 V

上升时间

61 ns

漏源电压 (Vdss)

40 V

Vgs（最大值）

±20V

产品类别

MOSFET

晶体管类型

1 P - Channel

信道型

P

场效应管特性

-

特征

Ground

产品类别

MOSFET