ROHM Semiconductor RD3G08CBLHRBTL

包装/外壳

TO-252-3

RoHS

符合RoHS标准

Mounting Styles

SMD/SMT

Transistor Polarity

N-Channel

Vds - Drain-Source Breakdown Voltage

40 V

Id - Continuous Drain Current

80 A

Rds On - Drain-Source Resistance

3.2 mOhms

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Vgs th - Gate-Source Threshold Voltage

4 V

Qg - Gate Charge

42 nC

Minimum Operating Temperature

- 55 C

Maximum Operating Temperature

+ 175 C

Pd - Power Dissipation

96 W

Channel Mode

Enhancement

Fall Time

14 ns

Forward Transconductance - Min

14 S

Factory Pack Quantity

2500

Typical Turn-Off Delay Time

65 ns

Typical Turn-On Delay Time

32 ns

包装

Reel

配置

Single

通道数量

1 Channel

上升时间

17 ns

晶体管类型

1 N-Channel