ROHM Semiconductor RH6R025BHTB1

安装类型

表面贴装

包装/外壳

8-PowerVDFN

供应商器件包装

8-HSMT (3.2x3)

Package

Tape & Reel (TR);Cut Tape (CT);Digi-Reel®;

Base Product Number

RH6R025

Current - Continuous Drain (Id) @ 25℃

25A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

厂商

Rohm Semiconductor

Power Dissipation (Max)

2W (Ta), 59W (Tc)

Product Status

活跃

Vds - Drain-Source Breakdown Voltage

150 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

59 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

16.7 nC

Rds On - Drain-Source Resistance

73 mOhms

Id - Continuous Drain Current

25 A

操作温度

150°C (TJ)

系列

-

技术

MOSFET (Metal Oxide)

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

60mOhm @ 25A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

1010 pF @ 75 V

门极电荷(Qg)(最大)@Vgs

16.7 nC @ 10 V

漏源电压 (Vdss)

150 V

Vgs（最大值）

±20V

场效应管特性

-