Rohm Semiconductor RS1P600BHTB1

安装类型

表面贴装

包装/外壳

8-PowerTDFN

供应商器件包装

8-HSOP

厂商

Rohm Semiconductor

Product Status

活跃

Current - Continuous Drain (Id) @ 25℃

18A (Ta), 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Power Dissipation (Max)

3W (Ta), 35W (Tc)

Package Type

HSOP8

Vds - Drain-Source Breakdown Voltage

100 V

Vgs th - Gate-Source Threshold Voltage

4 V

Pd - Power Dissipation

35 W

Transistor Polarity

N-Channel

Maximum Operating Temperature

+ 150 C

Vgs - Gate-Source Voltage

- 20 V, + 20 V

Minimum Operating Temperature

- 55 C

Mounting Styles

SMD/SMT

Channel Mode

Enhancement

Qg - Gate Charge

32 nC

Rds On - Drain-Source Resistance

8.8 mOhms

Id - Continuous Drain Current

60 A

系列

-

操作温度

150°C (TJ)

引脚数量

8

通道数量

1 Channel

场效应管类型

N-Channel

Rds On(Max)@Id,Vgs

8.8mOhm @ 18A, 10V

不同 Id 时 Vgs(th)（最大值）

4V @ 1mA

输入电容(Ciss)(Max)@Vds

4080 pF @ 50 V

门极电荷(Qg)(最大)@Vgs

64 nC @ 10 V

漏源电压 (Vdss)

100 V

Vgs（最大值）

±20V

信道型

N

场效应管特性

-